An algorithm and a technique are developed for finding the maximum values of the target current components in a MOS transistor with an n-type built-in channel depending on the submicron and nanoscale topological norms for a frequency transformer in the presence of intensive noise at its input. The spectral making components of the intermediate frequency are evaluated and analyzed for the given amplitudes of the generator, signal, and handicap. The behavior of the n-MOS transistors designed according to the GPDK045 and GPDK0990 technological norms is investigated.
Russian Microelectronics – Springer Journals
Published: Feb 16, 2017
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