Effects of Zn-doped on the microstructure and electrical properties of Mn1.5−xCo1.2Cu0.3ZnxO4(0 ≤ x ≤ 0.5) NTC ceramics

Effects of Zn-doped on the microstructure and electrical properties of... In this paper, the Mn1.5 − xCo1.2Cu0.3ZnxO4 (0 ≤ x ≤ 0.5) negative temperature coefficient (NTC) ceramics were attained by the traditional solid state reaction method. The effects of Zn addition on microstructure and electrical properties were characterized by thermo-gravimetry–differential scanning calorimetry, X-ray diffraction, scanning electron microscope, electrical measurement and X-ray photoelectron spectroscopy analysis. It was found that the resistivity decreased slightly with increasing Zn ions content for x ≤ 0.2, but increased remarkably for higher Zn ions content. The values ρ25 and B25/50 of Mn1.5 − xCo1.2Cu0.3ZnxO4 (0 ≤ x ≤ 0.5) NTC thermistors were in the range of 126–706 Ω cm and 3323–3714 K, respectively. The values of relative resistance drift (ΔR/R 0) were in the range of 2.7–1.13% and had a minimum value with the Zn content x = 0.5 after aging test at 125 °C for 500 h. This suggests that the electrical properties can be adjusted to desired values by controlling the Zn ion doping content. Most importantly, the stability of Mn1.5 − xCo1.2Cu0.3ZnxO4 ceramic can be effectively improved by Zn doping. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

Effects of Zn-doped on the microstructure and electrical properties of Mn1.5−xCo1.2Cu0.3ZnxO4(0 ≤ x ≤ 0.5) NTC ceramics

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Publisher
Springer US
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-017-8471-4
Publisher site
See Article on Publisher Site

Abstract

In this paper, the Mn1.5 − xCo1.2Cu0.3ZnxO4 (0 ≤ x ≤ 0.5) negative temperature coefficient (NTC) ceramics were attained by the traditional solid state reaction method. The effects of Zn addition on microstructure and electrical properties were characterized by thermo-gravimetry–differential scanning calorimetry, X-ray diffraction, scanning electron microscope, electrical measurement and X-ray photoelectron spectroscopy analysis. It was found that the resistivity decreased slightly with increasing Zn ions content for x ≤ 0.2, but increased remarkably for higher Zn ions content. The values ρ25 and B25/50 of Mn1.5 − xCo1.2Cu0.3ZnxO4 (0 ≤ x ≤ 0.5) NTC thermistors were in the range of 126–706 Ω cm and 3323–3714 K, respectively. The values of relative resistance drift (ΔR/R 0) were in the range of 2.7–1.13% and had a minimum value with the Zn content x = 0.5 after aging test at 125 °C for 500 h. This suggests that the electrical properties can be adjusted to desired values by controlling the Zn ion doping content. Most importantly, the stability of Mn1.5 − xCo1.2Cu0.3ZnxO4 ceramic can be effectively improved by Zn doping.

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: Dec 29, 2017

References

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