ZnO:B films with nominal thicknesses of 400 nm are deposited by magnetron sputtering at radio frequency (RF) powers ranging from 80 to 180 W. A link between the material and optoelectronic properties of ZnO:B films is demonstrated. The results show that the crystallinity increases with increasing RF power, resulting in high mobility of ZnO:B films. Quantification by X-ray photoelectron spectroscopy suggests that the boron content and oxygen deficiency increases with increasing RF power. Hall effect measurements also reveal that the carrier concentration and Hall mobility increase with increasing RF power, leading to lowering of the resistivity of ZnO:B films. The lowest resistivity that can be achieved for ZnO:B films deposited at 180 W is 4.46 × 10−3 Ω cm.
Applied Physics A: Materials Science Processing – Springer Journals
Published: Jun 1, 2018
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