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Effects of radio frequency power on structural, optical, and electronic properties of sputter-deposited ZnO:B thin films

Effects of radio frequency power on structural, optical, and electronic properties of... ZnO:B films with nominal thicknesses of 400 nm are deposited by magnetron sputtering at radio frequency (RF) powers ranging from 80 to 180 W. A link between the material and optoelectronic properties of ZnO:B films is demonstrated. The results show that the crystallinity increases with increasing RF power, resulting in high mobility of ZnO:B films. Quantification by X-ray photoelectron spectroscopy suggests that the boron content and oxygen deficiency increases with increasing RF power. Hall effect measurements also reveal that the carrier concentration and Hall mobility increase with increasing RF power, leading to lowering of the resistivity of ZnO:B films. The lowest resistivity that can be achieved for ZnO:B films deposited at 180 W is 4.46 × 10−3 Ω cm. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Applied Physics A: Materials Science Processing Springer Journals

Effects of radio frequency power on structural, optical, and electronic properties of sputter-deposited ZnO:B thin films

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Publisher
Springer Journals
Copyright
Copyright © 2018 by Springer-Verlag GmbH Germany, part of Springer Nature
Subject
Physics; Condensed Matter Physics; Optical and Electronic Materials; Nanotechnology; Characterization and Evaluation of Materials; Surfaces and Interfaces, Thin Films; Operating Procedures, Materials Treatment
ISSN
0947-8396
eISSN
1432-0630
DOI
10.1007/s00339-018-1883-z
Publisher site
See Article on Publisher Site

Abstract

ZnO:B films with nominal thicknesses of 400 nm are deposited by magnetron sputtering at radio frequency (RF) powers ranging from 80 to 180 W. A link between the material and optoelectronic properties of ZnO:B films is demonstrated. The results show that the crystallinity increases with increasing RF power, resulting in high mobility of ZnO:B films. Quantification by X-ray photoelectron spectroscopy suggests that the boron content and oxygen deficiency increases with increasing RF power. Hall effect measurements also reveal that the carrier concentration and Hall mobility increase with increasing RF power, leading to lowering of the resistivity of ZnO:B films. The lowest resistivity that can be achieved for ZnO:B films deposited at 180 W is 4.46 × 10−3 Ω cm.

Journal

Applied Physics A: Materials Science Processing – Springer Journals

Published: Jun 1, 2018

References

  • Glow Discharge Processes: Sputtering and Plasma Etching
    Chapman, B
  • Structure of Metals
    Barret, C; Massalki, TB
  • Electronic Properties of Materials
    Hummel, RE