Effects of dc bias on dielectric relaxations in CaCu3Ti4O12 ceramics

Effects of dc bias on dielectric relaxations in CaCu3Ti4O12 ceramics Effects of dc bias on dielectric relaxations in CaCu3Ti4O12 ceramics were investigated via an improved dielectric spectroscopy. A new low-frequency dielectric relaxation, which was assigned to space charge polarization, was found shifting towards higher frequency with increasing bias voltage in the improved spectra. It was suggested that the Schottky barrier at grain boundary was lowered under dc bias resulting in higher possibility for carriers to migrate. Therefore, the relaxation time was decreased, which was in accordance with rightward shift of this relaxation under increased dc bias. In addition, dependence of the widely reported high-frequency relaxation (> 105 Hz) and middle-frequency relaxation (103–105 Hz) on bias voltage was also discussed. Permittivity contributed by either high-frequency or middle-frequency relaxation presented inverse dependence on dc bias. Discrepancy on barrier parameters was obtained assuming both of them physically correlated with the barrier at grain boundary. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

Effects of dc bias on dielectric relaxations in CaCu3Ti4O12 ceramics

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Publisher
Springer Journals
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-017-8396-y
Publisher site
See Article on Publisher Site

Abstract

Effects of dc bias on dielectric relaxations in CaCu3Ti4O12 ceramics were investigated via an improved dielectric spectroscopy. A new low-frequency dielectric relaxation, which was assigned to space charge polarization, was found shifting towards higher frequency with increasing bias voltage in the improved spectra. It was suggested that the Schottky barrier at grain boundary was lowered under dc bias resulting in higher possibility for carriers to migrate. Therefore, the relaxation time was decreased, which was in accordance with rightward shift of this relaxation under increased dc bias. In addition, dependence of the widely reported high-frequency relaxation (> 105 Hz) and middle-frequency relaxation (103–105 Hz) on bias voltage was also discussed. Permittivity contributed by either high-frequency or middle-frequency relaxation presented inverse dependence on dc bias. Discrepancy on barrier parameters was obtained assuming both of them physically correlated with the barrier at grain boundary.

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: Dec 14, 2017

References

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