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Effect of the thickness of Si film on Si/Se film doped silicon prepared by femtosecond laser

Effect of the thickness of Si film on Si/Se film doped silicon prepared by femtosecond laser The high infrared absorption of silicon could be achieved by doping silicon with chalcogens via femtosecond laser. In the paper, the samples of Se-doped silicon with different thickness of Si film were prepared with the aid of femtosecond laser. The effect of the thickness of silicon film on optical and the electrical properties of se-doped silicon is investigated. All the samples were thermally annealed at 500 °C for 1 h, and the absorptance of all the samples was found with a certain degree of reduction. With the increase of thickness of silicon film, the results of visible-near infrared spectrum showed that the infrared absorptance increased first and then decreased. In particular, the optical absorption, sheet carrier density and responsivity for samples prepared with the silicon film that was 300 nm thick were greater than that of the samples prepared with the Si films of other thickness. The experiment demonstrated that it is significant to select the silicon film of appropriate thickness in the fabrication of Se doped silicon. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

Effect of the thickness of Si film on Si/Se film doped silicon prepared by femtosecond laser

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References (21)

Publisher
Springer Journals
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
DOI
10.1007/s10854-017-8401-5
Publisher site
See Article on Publisher Site

Abstract

The high infrared absorption of silicon could be achieved by doping silicon with chalcogens via femtosecond laser. In the paper, the samples of Se-doped silicon with different thickness of Si film were prepared with the aid of femtosecond laser. The effect of the thickness of silicon film on optical and the electrical properties of se-doped silicon is investigated. All the samples were thermally annealed at 500 °C for 1 h, and the absorptance of all the samples was found with a certain degree of reduction. With the increase of thickness of silicon film, the results of visible-near infrared spectrum showed that the infrared absorptance increased first and then decreased. In particular, the optical absorption, sheet carrier density and responsivity for samples prepared with the silicon film that was 300 nm thick were greater than that of the samples prepared with the Si films of other thickness. The experiment demonstrated that it is significant to select the silicon film of appropriate thickness in the fabrication of Se doped silicon.

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: Dec 11, 2017

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