Effect of the material of injecting contacts on the CVCs of Pb1 − x Sn x Te:In films

Effect of the material of injecting contacts on the CVCs of Pb1 − x Sn x Te:In films The flowing of the injection current in Pb1 − x Sn x Te:In structures (x ≥ 0.3) with various metal contacts at the temperature of helium is considered. The current-voltage characteristics (CVCs) of the structures in the dark and when they are illuminated from the blackbody model are given. It is found that the CVCs depend on the materials of the metal contact. The localized state density distribution over the forbidden band in structures with various contacts is given and the influence of the contact region and localized states on the CVC is discussed. The problems of constructing photodetectors with optimum threshold characteristics are discussed. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Effect of the material of injecting contacts on the CVCs of Pb1 − x Sn x Te:In films

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2013 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739713020030
Publisher site
See Article on Publisher Site

Abstract

The flowing of the injection current in Pb1 − x Sn x Te:In structures (x ≥ 0.3) with various metal contacts at the temperature of helium is considered. The current-voltage characteristics (CVCs) of the structures in the dark and when they are illuminated from the blackbody model are given. It is found that the CVCs depend on the materials of the metal contact. The localized state density distribution over the forbidden band in structures with various contacts is given and the influence of the contact region and localized states on the CVC is discussed. The problems of constructing photodetectors with optimum threshold characteristics are discussed.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 13, 2013

References

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