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V Gavrilenko, Yu Novikov, A Rakov, P Todua (2009)
Nanoindustriya
MA Danilova, VB Mityukhlyaev, YuA Novikov, YuV Ozerin, AV Rakov, PA Todua (2008)
A test object with a line width less than 10 nm for scanning electron microscopyMeasurement Techniques, 51
VP Gavrilenko, VA Kalnov, YuA Novikov, AA Orlikovsky, AV Rakov, PA Todua, KA Valiev, EN Zhikharev (2009)
Measurement of dimensions of resist mask elements below 100 nm with help of a scanning electron microscopeProc. SPIE, 7272
VP Gavrilenko, MN Filippov, YuA Novikov, AV Rakov, PA Todua (2009)
Russian standards for dimensional measurements for nanotechnologiesProc. SPIE, 7378
ChP Volk, ES Gornev, YuA Novikov, YuV Ozerin, YuI Plotnikov, AV Rakov (2004)
SEM linear measurement in a wide magnification rangeRuss. Microelectron., 33
YuA Novikov, AV Rakov, PA Todua (2009)
Classification of test objects for use in calibration of scanning electron microscopes in the nanometric rangeMeasurement Techniques, 52
YuA Novikov, VP Gavrilenko, YuV Ozerin, AV Rakov, PA Todua (2007)
Silicon test object of the linewidth of the nanometer range for SEM and AFMProc. SPIE, 6648
VP Gavrilenko, YuA Novikov, AV Rakov, PA Todua (2009)
Nanoscale dimensional metrology in RussiaProc. SPIE, 7405
PA Todua, VP Gavrilenko, YuA Novikov, AV Rakov (2008)
Check of the quality of fabrication of test objects with a trapezoidal profileProc. SPIE, 7042
ChP Volk, ES Gornev, YuA Novikov, YuV Ozerin, YuI Plotnikov, AM Prokhorov, AV Rakov (2002)
Linear standard for SEM-AFM microelectronics dimensional metrology in the range 0.01–100 μmRuss. Microelectron., 31
ChP Volk, YuA Novikov, AV Rakov, PA Todua (2008)
Calibrating a scanning electron microscope in two coordinates by the use of one certified dimensionMeasurement Techniques, 51
VP Gavrilenko, MN Filippov, YuA Novikov, AV Rakov, PA Todua (2007)
Measurements of linear sizes of relief elements in the nanometer range using a scanning electron microscopeProc. SPIE, 6648
MT Postek, AE Vladar (2001)
Handbook of Silicon Semiconductor Metrology
ChP Volk, ES Gornev, YuA Novikov, YuI Plotnikov, AV Rakov, PA Todua (2006)
Linear measurements in micrometer and nanometer ranges for microelectronics and nanotechnology
VP Gavrilenko, YuA Novikov, AV Rakov, PA Todua, ChP Volk (2009)
Calibration of a scanning electron microscope in the wide range of magnifications for the microscope operation in the integrated circuit production lineProc. SPIE, 7272
T Hatsuzawa, K Toyoda, Y Tanimura (1990)
Metrological electron microscope system for microfeature of very large scale integrated circuitsRev. Sci. Instrum., 61
YuA Novikov, AV Rakov (1999)
Metrology of VLSI critical element sizesMeasurement Techniques, 42
CG Frase, W Hassler-Grohne, G Dai, H Bosse, YuA Novikov, AV Rakov (2007)
SEM linewidth measurements of anisotropically etched silicon structures smaller than 0.1 μmMeas. Sci. Technol., 18
VP Gavrilenko, EN Lesnovsky, YuA Novikov, AV Rakov, PA Todua, MN Filippov (2009)
First Russian standards in nanotechnologyBull. Russ. Acad. Sci.: Phys., 73
W Haessler-Grohne, H Bosse (1998)
An electron optical metrology system for pattern placement measurementsMeas. Sci. Technol., 9
VP Gavrilenko, YuA Novikov, AV Rakov, PA Todua (2008)
Measurement of the parameters of the electron beam of a scanning electron microscopeProc. SPIE, 7042
The effect of the slope of a test object with a trapezoidal profile and high inclination of side walls on the calibration of a scanning electron microscope (SEM) is investigated. Being used as an attested parameter for the structure pitch or dimensions of upper and lower bases of hills and valleys, the slope of the test object does not affect the calibration of the SEM. However, when using the projection of the inclined side wall of hills and valleys onto the structure base to calibrate the SEM, the slope of the test object leads to a systematic error in determining the increase (of the pixelsize), which is several times larger than the random error. A method for determining the test object slope is developed that allows one to measure the slope, as well as evaluate and eliminate the systematic inaccuracy.
Russian Microelectronics – Springer Journals
Published: Mar 4, 2015
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