Effect of polymer matrix and photoacid generator on the lithographic properties of chemically amplified photoresist

Effect of polymer matrix and photoacid generator on the lithographic properties of chemically... Resistive compositions based on ter-copolymers of isobornylacrylate with methylmethacrylate and (meth)acrylic acid, which are synthesized using the controlled radical polymerization with reversible chain transfer, as well as triphenylsulphoniumtriflate as a photo-sensitive catalyst are studied. The effect of the chain-transfer agent, as well as the composition and molecular weight of the copolymer on the sensitivity of the resists to UV radiation (222 nm), is determined. Using the ter-copolymer of tert-butoxycarbonyloxystyrene with methylmethacrylate and methacrylic acid, the dependence of the lithographic properties of the photoresist on the chemical composition of the photoacid generator is analyzed. The plasma-chemical stability of (co)polymer resists of methacrylic series in the plasma of Ar + SF6 is studied. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Effect of polymer matrix and photoacid generator on the lithographic properties of chemically amplified photoresist

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Publisher
Pleiades Publishing
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739714050023
Publisher site
See Article on Publisher Site

Abstract

Resistive compositions based on ter-copolymers of isobornylacrylate with methylmethacrylate and (meth)acrylic acid, which are synthesized using the controlled radical polymerization with reversible chain transfer, as well as triphenylsulphoniumtriflate as a photo-sensitive catalyst are studied. The effect of the chain-transfer agent, as well as the composition and molecular weight of the copolymer on the sensitivity of the resists to UV radiation (222 nm), is determined. Using the ter-copolymer of tert-butoxycarbonyloxystyrene with methylmethacrylate and methacrylic acid, the dependence of the lithographic properties of the photoresist on the chemical composition of the photoacid generator is analyzed. The plasma-chemical stability of (co)polymer resists of methacrylic series in the plasma of Ar + SF6 is studied.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 12, 2014

References

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