For doped polysilicon films, an experimental investigation is presented into the variation of temperature coefficient of resistance (TCR) with formation conditions, the dopants being rare-earth elements (Eu, Gd, and Yb), oxygen, germanium, and implanted boron or phosphorus. The sign and magnitude of the TCR are shown to be governed by the dopant concentrations and the conditions of postimplantation annealing. Common and specific features are identified in the behavior of TCR for undoped films and for doped ones differing in dopant and doping technique. A negative TCR is observed in undoped films and in ones doped with a rare-earth element or germanium. B or P ion implantation into films predoped with Ge is shown to give a positive TCR if the implant concentration exceeds 1018 atoms/cm3. With any of the dopants employed, raising the dopant concentration makes possible the transition from a negative to a positive TCR.
Russian Microelectronics – Springer Journals
Published: May 25, 2007
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