An experimental investigation is carried out to evaluate the reliability of on-chip aluminum wiring in relation to the conditions of barrier-layer deposition, with the barrier material being polycrystalline or amorphous silicon produced by pyrolyzing silane. The highest values of electromigration activation energy in the conductor are achieved with hydrogenated amorphous silicon, deposited at a suitably reduced temperature. For wiring patterns lying on a complex topography, the influence of steps on the electrical performance of wires is found to be the main factor in wiring reliability.
Russian Microelectronics – Springer Journals
Published: Sep 30, 2011
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