Effect of Ar and He additives on the kinetics of GaAs etching in CF2Cl2 plasma

Effect of Ar and He additives on the kinetics of GaAs etching in CF2Cl2 plasma The effect of argon and helium additives on the kinetics of GaAs etching in high-frequency (HF) CF2Cl2 plasma has been analyzed. It is shown that dilution of the CF2Cl2 with argon or helium at a 1: 1 ratio insignificantly decreases the etching rate. An application of the bias power onto a substrate holder leads to http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Effect of Ar and He additives on the kinetics of GaAs etching in CF2Cl2 plasma

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Publisher
Pleiades Publishing
Copyright
Copyright © 2017 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S106373971702007X
Publisher site
See Article on Publisher Site

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