A Monte Carlo simulation is run to study the electron transport in a thin undoped GaAs quantum wire under the influence of a transverse applied electric field. Phonon and surface-roughness scattering are included. Electron drift velocity is investigated as a function of roughness amplitude at a temperature of 77 or 300 K and a longitudinal electric field of 104 or 105 V/m. A transverse applied field is shown to provide a means of controlling drift velocity, affecting the scattering rate.
Russian Microelectronics – Springer Journals
Published: Nov 11, 2010
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