Effect of 6R and 12R lead iodide polytypes on MAPbI3 perovskite device performance

Effect of 6R and 12R lead iodide polytypes on MAPbI3 perovskite device performance We compare the structural, morphological and electrical properties of two variants of the ITO/ZnO/ $$\hbox {CH}_3\hbox {NH}_3\hbox {PbI}_3$$ CH 3 NH 3 PbI 3 /PDOT:PSS/Au thin film perovskite device made using two structurally different forms of lead iodide. The first device was based on a commercially sourced, common 12R polytype. The second device uses the rarer 6R polytype, as recently synthesized by the authors from depleted sealed lead acid batteries. XRD measurements confirmed the presence of the orthorhombic 6R polytype and the tetragonal 12R polytype. Raman spectroscopy confirmed the presence of all organic–inorganic halide materials. Current–voltage measurements for both samples show good rectifying behavior of the resulting heterogeneous Schottky diodes. The ideality factors and barrier heights were found to be 4.07/4.09 and 0.500/0.496 eV for the 6R/12R polytypes, respectively. The 6R polytype devices appeared to show improved I–V characteristics in comparison to the 12R polytype, thus suggesting an avenue to enhance the performance of MAPbX3 prevoskite devices. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

Effect of 6R and 12R lead iodide polytypes on MAPbI3 perovskite device performance

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Publisher
Springer Journals
Copyright
Copyright © 2018 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-018-9422-4
Publisher site
See Article on Publisher Site

Abstract

We compare the structural, morphological and electrical properties of two variants of the ITO/ZnO/ $$\hbox {CH}_3\hbox {NH}_3\hbox {PbI}_3$$ CH 3 NH 3 PbI 3 /PDOT:PSS/Au thin film perovskite device made using two structurally different forms of lead iodide. The first device was based on a commercially sourced, common 12R polytype. The second device uses the rarer 6R polytype, as recently synthesized by the authors from depleted sealed lead acid batteries. XRD measurements confirmed the presence of the orthorhombic 6R polytype and the tetragonal 12R polytype. Raman spectroscopy confirmed the presence of all organic–inorganic halide materials. Current–voltage measurements for both samples show good rectifying behavior of the resulting heterogeneous Schottky diodes. The ideality factors and barrier heights were found to be 4.07/4.09 and 0.500/0.496 eV for the 6R/12R polytypes, respectively. The 6R polytype devices appeared to show improved I–V characteristics in comparison to the 12R polytype, thus suggesting an avenue to enhance the performance of MAPbX3 prevoskite devices.

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: Jun 6, 2018

References

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