A dynamic behavioral model of an integrated memory cell based on the effect of tunnel magnetoresistance is developed in which the hysteresis and time characteristics are described by a Landau-Lifshitz-Gilbert equation. The use of the model is demonstrated by an example of a next-generation magnetoresisitve memory cell integrated on silicon. The transient and current-voltage characteristics of the memory cell are calculated for different thicknesses of a tunnel insulator; the variation in the magnetization angle of a free ferromagnetic layer as a function of the current flowing in a write line is shown. The tunnel magnetoresistance value, memory-cell state switching delay, and maximum operating frequency are calculated.
Russian Microelectronics – Springer Journals
Published: Sep 30, 2011
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