Dynamic model of a memory cell based on tunnel magnetoresistance

Dynamic model of a memory cell based on tunnel magnetoresistance A dynamic behavioral model of an integrated memory cell based on the effect of tunnel magnetoresistance is developed in which the hysteresis and time characteristics are described by a Landau-Lifshitz-Gilbert equation. The use of the model is demonstrated by an example of a next-generation magnetoresisitve memory cell integrated on silicon. The transient and current-voltage characteristics of the memory cell are calculated for different thicknesses of a tunnel insulator; the variation in the magnetization angle of a free ferromagnetic layer as a function of the current flowing in a write line is shown. The tunnel magnetoresistance value, memory-cell state switching delay, and maximum operating frequency are calculated. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Dynamic model of a memory cell based on tunnel magnetoresistance

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2011 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739711020065
Publisher site
See Article on Publisher Site

Abstract

A dynamic behavioral model of an integrated memory cell based on the effect of tunnel magnetoresistance is developed in which the hysteresis and time characteristics are described by a Landau-Lifshitz-Gilbert equation. The use of the model is demonstrated by an example of a next-generation magnetoresisitve memory cell integrated on silicon. The transient and current-voltage characteristics of the memory cell are calculated for different thicknesses of a tunnel insulator; the variation in the magnetization angle of a free ferromagnetic layer as a function of the current flowing in a write line is shown. The tunnel magnetoresistance value, memory-cell state switching delay, and maximum operating frequency are calculated.

Journal

Russian MicroelectronicsSpringer Journals

Published: Sep 30, 2011

References

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