A computer simulation is presented of the carrier transport in a diffusion-doped dual-collector lateral bipolar magnetotransistor fabricated from a p-well in an n-substrate, with the substrate and the well interconnected externally. The mechanism by which the negative relative sensitivity of collector current arises is addressed. Carrier transport under low-level injection is analyzed. It is concluded that negative relative sensitivity results from the magnetic-field-induced redistribution of electrons and holes that recombine in the base. This model of negative relative sensitivity might be called the bulk recombination mechanism.
Russian Microelectronics – Springer Journals
Published: Oct 11, 2004
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