Dual-Collector Lateral Bipolar Magnetotransistor: Carrier Transport and Relative Sensitivity

Dual-Collector Lateral Bipolar Magnetotransistor: Carrier Transport and Relative Sensitivity A computer simulation is presented of the carrier transport in a diffusion-doped dual-collector lateral bipolar magnetotransistor fabricated from a p-well in an n-substrate, with the substrate and the well interconnected externally. The mechanism by which the negative relative sensitivity of collector current arises is addressed. Carrier transport under low-level injection is analyzed. It is concluded that negative relative sensitivity results from the magnetic-field-induced redistribution of electrons and holes that recombine in the base. This model of negative relative sensitivity might be called the bulk recombination mechanism. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Dual-Collector Lateral Bipolar Magnetotransistor: Carrier Transport and Relative Sensitivity

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Publisher
Springer Journals
Copyright
Copyright © 2003 by MAIK Nauka/Interperiodica
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1027306413792
Publisher site
See Article on Publisher Site

Abstract

A computer simulation is presented of the carrier transport in a diffusion-doped dual-collector lateral bipolar magnetotransistor fabricated from a p-well in an n-substrate, with the substrate and the well interconnected externally. The mechanism by which the negative relative sensitivity of collector current arises is addressed. Carrier transport under low-level injection is analyzed. It is concluded that negative relative sensitivity results from the magnetic-field-induced redistribution of electrons and holes that recombine in the base. This model of negative relative sensitivity might be called the bulk recombination mechanism.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 11, 2004

References

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