The definition of the magnitude and sign of magnetic-field sensitivity is discussed in relation to the bipolar magnetotransistor. The bulk-recombination mechanism (also known as the volumetric concentration-recombination mechanism) is found to determine the response of the device to a magnetic field and a conclusion is drawn from the results of an experiment and a TCAD simulation. It is noted that acquiring an adequate understanding of the mechanism underlying the operation of the device should help one improve its magnetic-field sensitivity.
Russian Microelectronics – Springer Journals
Published: Jul 19, 2009
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