Double-Junction Schottky Diodes Using a Ti/Si/Al Structure

Double-Junction Schottky Diodes Using a Ti/Si/Al Structure Ti/Si/Al structures are studied theoretically and experimentally. The effect of the reverse-biased junction on the current–voltage characteristic of the entire structure is revealed. It is noted that the behavior of the curve is determined by the image-force lowering of the potential barrier. The current–voltage characteristic is shown to obey a power law if the voltage is low enough. It is established that the capacitance of the structure decreases with increasing voltage if the latter is positive. This phenomenon is modeled using two capacitors in a series. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Double-Junction Schottky Diodes Using a Ti/Si/Al Structure

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2002 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1014397527149
Publisher site
See Article on Publisher Site

Abstract

Ti/Si/Al structures are studied theoretically and experimentally. The effect of the reverse-biased junction on the current–voltage characteristic of the entire structure is revealed. It is noted that the behavior of the curve is determined by the image-force lowering of the potential barrier. The current–voltage characteristic is shown to obey a power law if the voltage is low enough. It is established that the capacitance of the structure decreases with increasing voltage if the latter is positive. This phenomenon is modeled using two capacitors in a series.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 13, 2004

References

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