Access the full text.
Sign up today, get DeepDyve free for 14 days.
Jifeng Liu, X. Sun, R. Camacho-Aguilera, L. Kimerling, J. Michel (2010)
Ge-on-Si laser operating at room temperature.Optics letters, 35 5
M. Hinze, R. Pinnau (2002)
AN OPTIMAL CONTROL APPROACH TO SEMICONDUCTOR DESIGNMathematical Models and Methods in Applied Sciences, 12
D. Peschka, N. Rotundo, M. Thomas (2015)
Towards Doping Optimization of Semiconductor LasersJournal of Computational and Theoretical Transport, 45
U. Bandelow, H. Gajewski, R. Hunlich (2005)
Fabry-Perot Lasers: Thermodynamics-Based Modeling
K. Gröger (1987)
Markowich, P. A., The Stationary Semiconductor Device Equations. Wien-New York, Springer-Verlag 1986. XI, 193 S., 40 Abb., öS 686,–. DM 98,–. ISBN 3-211-81892-8 (Computational Microelectronics)Zamm-zeitschrift Fur Angewandte Mathematik Und Mechanik, 67
D. Peschka, M. Thomas, A. Glitzky, R. Nurnberg, K. Gartner, M. Virgilio, S. Guha, T. Schroeder, G. Capellini, T. Koprucki (2015)
Modeling of Edge-Emitting Lasers Based on Tensile Strained Germanium MicrostripsIEEE Photonics Journal, 7
M. Hinze, R. Pinnau (2007)
Second-Order Approach to Optimal Semiconductor DesignJournal of Optimization Theory and Applications, 133
M. Weiser, A. Schiela, P. Deuflhard (2004)
Asymptotic Mesh Independence of Newton's Method RevisitedSIAM J. Numer. Anal., 42
(2016)
Matheon preprint (to appear in Proceedings of ECMI 2016
A. Mielke, D. Peschka, N. Rotundo, Marita Thomas (2016)
Gradient structure for optoelectronic models of semiconductors
B. Dutt, D. Sukhdeo, D. Nam, B. Vulović, Ze Yuan, K. Saraswat (2012)
Roadmap to an Efficient Germanium-on-Silicon Laser: Strain vs. n-Type DopingIEEE Photonics Journal, 4
V. Nagavarapu, R. Jhaveri, J. Woo (2008)
The Tunnel Source (PNPN) n-MOSFET: A Novel High Performance TransistorIEEE Transactions on Electron Devices, 55
M. Sever, P. Markowich (1987)
The Stationary Semiconductor Device Equations.Mathematics of Computation, 49
M. Barget, M. Virgilio, G. Capellini, Y. Yamamoto, T. Schroeder (2017)
The impact of donors on recombination mechanisms in heavily doped Ge/Si layersJournal of Applied Physics, 121
M. Burger, R. Pinnau (2003)
Fast Optimal Design of Semiconductor DevicesSIAM J. Appl. Math., 64
M. Maur (2008)
A Multiscale simulation environment for electronic and optoelectronic devices
We present a mathematical and numerical framework for the optimal design of doping profiles for optoelectronic devices using methods from mathematical optimization. With the goal to maximize light emission and reduce the threshold of an edge-emitting laser, we consider a drift-diffusion model for charge transport and include modal gain and total current into a cost functional, which we optimize in cross sections of the emitter. We present 1D and 2D results for exemplary setups that point out possible routes for device improvement.
Optical and Quantum Electronics – Springer Journals
Published: Feb 21, 2018
Access the full text.
Sign up today, get DeepDyve free for 14 days.