Discrete electron states at the Si(100)/SiO2 interface

Discrete electron states at the Si(100)/SiO2 interface Electron states at thep-Si(100)/SiO2 interface were studied by the method of temperature dependence of surface photo-emf. Taking into account our earlier results on the n-Si(100)/SiO2 interface, we found that, in the absence of an external electric field, four electron states exist in the silicon energy gap. Their positions relative to the midgap Ei are Ei-0.22, Ei -0.11, Ei + 0.23, and Ei + 0.32 eV. It is believed that Pb0andP b1 centers are responsible for these interface states, which are discovered by the EPR method. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Discrete electron states at the Si(100)/SiO2 interface

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Publisher
Nauka/Interperiodica
Copyright
Copyright © 2000 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electronic and Computer Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1007/BF02773286
Publisher site
See Article on Publisher Site

Abstract

Electron states at thep-Si(100)/SiO2 interface were studied by the method of temperature dependence of surface photo-emf. Taking into account our earlier results on the n-Si(100)/SiO2 interface, we found that, in the absence of an external electric field, four electron states exist in the silicon energy gap. Their positions relative to the midgap Ei are Ei-0.22, Ei -0.11, Ei + 0.23, and Ei + 0.32 eV. It is believed that Pb0andP b1 centers are responsible for these interface states, which are discovered by the EPR method.

Journal

Russian MicroelectronicsSpringer Journals

Published: Dec 4, 2007

References

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