Direct conversion of β-decay energy into electrical energy

Direct conversion of β-decay energy into electrical energy A comparison of the efficiencies of the power supplies produced based on the β-radiation sources has been carried out. The factors decreasing the efficiency of the device have been revealed. The results of the experimental studies and calculations of the efficiency of the direct energy conversion of Ni-63 β-radiation into electrical energy using silicon p–i–n diodes are presented. An expression for the open-circuit voltage of the convertor taking into account the distribution of high-energy electrons in the space charge region (SCR) of the p–i–n diode has been obtained. The ways of optimizing the convertor’s parameters due to improvements in the diode production technology and optimization of the thicknesses of the active emitter layer and i-region of the semiconductor convertor have been indicated. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Direct conversion of β-decay energy into electrical energy

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Publisher
Pleiades Publishing
Copyright
Copyright © 2017 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739717010024
Publisher site
See Article on Publisher Site

Abstract

A comparison of the efficiencies of the power supplies produced based on the β-radiation sources has been carried out. The factors decreasing the efficiency of the device have been revealed. The results of the experimental studies and calculations of the efficiency of the direct energy conversion of Ni-63 β-radiation into electrical energy using silicon p–i–n diodes are presented. An expression for the open-circuit voltage of the convertor taking into account the distribution of high-energy electrons in the space charge region (SCR) of the p–i–n diode has been obtained. The ways of optimizing the convertor’s parameters due to improvements in the diode production technology and optimization of the thicknesses of the active emitter layer and i-region of the semiconductor convertor have been indicated.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 11, 2017

References

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