Diluted magnetic semiconductors: Actual structure and magnetic and transport properties

Diluted magnetic semiconductors: Actual structure and magnetic and transport properties An experimental investigation is conducted into electrical-transport, magnetic, optical, and structural properties of GaAs-based diluted-magnetic-semiconductor heterostructures containing a Ga1−x In x As quantum well and a Mn delta layer 0.5–1.8 ML thick, separated by a GaAs spacer of thickness 3 nm. Ferromagnetic features are observed in the electrical transport and the Hall effect, which involve the flow of holes across the quantum well. They indicate carrier spin polarization in the quantum well. The combined use of high-resolution x-ray diffraction and x-ray reflectivity has made it possible to reliably identify structural-parameter profiles for both the quantum well and the Mn delta layer. It is thus established that the distribution of Mn atoms is nonuniform, both horizontally and vertically. This finding suggests a conception whereby the Mn delta layer divides into nanoscale ferromagnetic-ordering regions and paramagnetic regions. Magnetic and electrical-transport properties of the heterostructures are discussed within this framework. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Diluted magnetic semiconductors: Actual structure and magnetic and transport properties

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2008 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739708020017
Publisher site
See Article on Publisher Site

Abstract

An experimental investigation is conducted into electrical-transport, magnetic, optical, and structural properties of GaAs-based diluted-magnetic-semiconductor heterostructures containing a Ga1−x In x As quantum well and a Mn delta layer 0.5–1.8 ML thick, separated by a GaAs spacer of thickness 3 nm. Ferromagnetic features are observed in the electrical transport and the Hall effect, which involve the flow of holes across the quantum well. They indicate carrier spin polarization in the quantum well. The combined use of high-resolution x-ray diffraction and x-ray reflectivity has made it possible to reliably identify structural-parameter profiles for both the quantum well and the Mn delta layer. It is thus established that the distribution of Mn atoms is nonuniform, both horizontally and vertically. This finding suggests a conception whereby the Mn delta layer divides into nanoscale ferromagnetic-ordering regions and paramagnetic regions. Magnetic and electrical-transport properties of the heterostructures are discussed within this framework.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jan 19, 2011

References

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