Diffraction ellipsometric measurement of step height on wafer surfaces

Diffraction ellipsometric measurement of step height on wafer surfaces A diffraction-ellipsometry method is described for determining step height on a homogeneous material or an arbitrary multilayer. It consists in measuring ellipsometric parameters for individual beams reflected from the respective sides of a step and for a combined beam obtained from the two reflected beams, with the step height calculated from the measured data by a specially designed algorithm. With multilayers, the ellipsometric parameters are also to be measured with the specimen immersed in a suitable liquid. Beam combining is performed by a special device, which is also designed to change the amplitude and phase of each beam by specific amounts. Care is taken to make the respective wave fronts of the reflected beams parallel on the photodetector. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Diffraction ellipsometric measurement of step height on wafer surfaces

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Publisher
Nauka/Interperiodica
Copyright
Copyright © 2005 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1007/s11180-005-0012-9
Publisher site
See Article on Publisher Site

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