Diagnostics of degradation processes in the metal-semiconductor system

Diagnostics of degradation processes in the metal-semiconductor system A mathematical model of thermal operational modes of the metal-semiconductor contact pair is constructed based on the analysis of the temperature fields in a semiconductor wafer with a surface heat source in a form of the metallization layer. The influence of current pulses with an amplitude j < 5 × 1010 A/m2 and duration of 100–1000 μs both on the aluminum film-silicon water (Al-Si) binary system and on the Alsublayer-Si multilayer systems with semiconductor (Si) and dielectric (SiO2, Si3N4) sublayers is investigated experimentally. It is shown that the presence of a sublayer with heat-conducting properties different from the substrate increases the heat load on the metallization layers, thereby decreasing the working current densities. The pulsed effect of the current of increased density (j > 5 × 1010 A/m2) on the metallization systems is analyzed in detail. It is shown that the degradation processes in such structures under the pulsed current perturbation are associated with the local nucleation of the liquid phase and contact melting in the metal-semiconductor system. A procedure, which ensures the diagnostics of multilayer thin-film metallization systems right up to the development of degradation processes upon the passage of rectangular current pulses through them, is suggested. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Diagnostics of degradation processes in the metal-semiconductor system

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Publisher
Springer Journals
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739711060114
Publisher site
See Article on Publisher Site

Abstract

A mathematical model of thermal operational modes of the metal-semiconductor contact pair is constructed based on the analysis of the temperature fields in a semiconductor wafer with a surface heat source in a form of the metallization layer. The influence of current pulses with an amplitude j < 5 × 1010 A/m2 and duration of 100–1000 μs both on the aluminum film-silicon water (Al-Si) binary system and on the Alsublayer-Si multilayer systems with semiconductor (Si) and dielectric (SiO2, Si3N4) sublayers is investigated experimentally. It is shown that the presence of a sublayer with heat-conducting properties different from the substrate increases the heat load on the metallization layers, thereby decreasing the working current densities. The pulsed effect of the current of increased density (j > 5 × 1010 A/m2) on the metallization systems is analyzed in detail. It is shown that the degradation processes in such structures under the pulsed current perturbation are associated with the local nucleation of the liquid phase and contact melting in the metal-semiconductor system. A procedure, which ensures the diagnostics of multilayer thin-film metallization systems right up to the development of degradation processes upon the passage of rectangular current pulses through them, is suggested.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jan 8, 2012

References

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