Development of integrated circuits for the reception path based on the SiGe-heterojunction bipolar transistors for the frequency range of 57–64 GHz

Development of integrated circuits for the reception path based on the SiGe-heterojunction... We considered constructing circuits for devices of reception path over the range of 57–64 GHz. We also presented a low-noise amplifier and a reducing mixer with monopolar input and output which are intended to manufacture the devices using the SiGe BiCMOS technology. This technology is characterized by the boundary frequency f t = 190 GHz and maximal oscillation frequency f max = 190 GHz. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Development of integrated circuits for the reception path based on the SiGe-heterojunction bipolar transistors for the frequency range of 57–64 GHz

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Publisher
Springer Journals
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739715070094
Publisher site
See Article on Publisher Site

Abstract

We considered constructing circuits for devices of reception path over the range of 57–64 GHz. We also presented a low-noise amplifier and a reducing mixer with monopolar input and output which are intended to manufacture the devices using the SiGe BiCMOS technology. This technology is characterized by the boundary frequency f t = 190 GHz and maximal oscillation frequency f max = 190 GHz.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 14, 2015

References

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