ISSN 10637397, Russian Microelectronics, 2015, Vol. 44, No. 7, pp. 478–481. © Pleiades Publishing, Ltd., 2015.
Original Russian Text © D.A. Koptsev, V.A. Dmitriev, 2014, published in Izvestiya Vysshikh Uchebnykh Zavedenii. Elektronika, 2014, No. 4(108), pp. 54–58.
The frequency range of 57–64 GHz has several
advantages for high speed (higher than 1 Gb/s) ultra
wideband data transmission. For instance, the large
damping coefficient of radio waves in the air increases
the noise immunity of local networks, which do not
interfere with each other.
Devices of the 60GHz frequency range include
consumer electronics with good prospects: access
points, transceivers for laptops, smart phones, TV sets,
and “smart home” systems. One of the most impor
tant characteristics of consumer electronics is the
price of the final product, which creates serious prob
lems for the use of expensive GaAs and InPtechnol
ogies. For modern CMOS and SiGetechnologies
with design rules of 45 and 250 nm, respectively, the value
of the cutoff frequency is in the range of 200 GHz, what
enables us to create devices with an operating fre
quency of 60 GHz . In microwave circuits, a large
part of the area is occupied by passive elements. That
is why reducing the topological rules does not affect
the area of the device. Herewith, the cost per area unit
increases significantly with a decrease of the topologi
cal rules. Thus, the use of SiGetechnology is a cost
beneficial solution for the production of circuits with
good prospects for transceivers of the 60GHz fre
quency range [2, 3].
The architecture of the reception path must be
chosen in terms of the purpose of the developed device
Development of Integrated Circuits for the Reception Path
Based on the SiGeHeterojunction Bipolar Transistors
for the Frequency Range of 57–64 GHz
D. A. Koptsev and V. A. Dmitriev
JSC Scientific Research Institute of Molecular electronics, Moscow, Russia
email: firstname.lastname@example.org, email@example.com
Received in April 10, 2014
—We considered constructing circuits for devices of reception path over the range of 57–64 GHz.
We also presented a lownoise amplifier and a reducing mixer with monopolar input and output which are
intended to manufacture the devices using the SiGe BiCMOS technology. This technology is characterized
by the boundary frequency
= 190 GHz and maximal oscillation frequency
= 190 GHz.
: integrated circuit: lownoise amplifier; mixer; SiGe BiCMOS technology; heterobipolar transis
tor; reception path
Superheterodyne structure of the reception path.