Development of fundamentals of droplet epitaxy for the formation of quantum dot arrays in the InAs/GaAs system under MOVPE conditions

Development of fundamentals of droplet epitaxy for the formation of quantum dot arrays in the... The initial stage of the formation of quantum dots in the InAs/GaAs system by droplet epitaxy is investigated. The results of the study of the effect that the modes of MOVPE have on the size and density of the array of nanodimensional indium droplets on a GaAs(100) substrate are presented. The possibility to use indium evaporation to control the sizes of the deposited droplets is shown. A reasonable temperature range for heat treatment (300–400°C) is chosen on the basis of the calculations of the indium evaporation rate and the temperature dependence of the droplet-substrate contact wetting angle. From the calculation of hetero-geneous equilibria in the In-Ga-As system, it was established that the change in the composition of the deposited droplets resulting from the possible substrate dissolution is extremely little in the specified temperature range. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Development of fundamentals of droplet epitaxy for the formation of quantum dot arrays in the InAs/GaAs system under MOVPE conditions

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739712080021
Publisher site
See Article on Publisher Site

Abstract

The initial stage of the formation of quantum dots in the InAs/GaAs system by droplet epitaxy is investigated. The results of the study of the effect that the modes of MOVPE have on the size and density of the array of nanodimensional indium droplets on a GaAs(100) substrate are presented. The possibility to use indium evaporation to control the sizes of the deposited droplets is shown. A reasonable temperature range for heat treatment (300–400°C) is chosen on the basis of the calculations of the indium evaporation rate and the temperature dependence of the droplet-substrate contact wetting angle. From the calculation of hetero-geneous equilibria in the In-Ga-As system, it was established that the change in the composition of the deposited droplets resulting from the possible substrate dissolution is extremely little in the specified temperature range.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 17, 2012

References

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