Determination of the indium arsenide autoepitaxial layers’ thickness by Fourier-Transform Infrared Spectroscopy

Determination of the indium arsenide autoepitaxial layers’ thickness by Fourier-Transform... A method for the nondestructive contactless control of thickness of undoped autoepitaxial InAs layers on heavily-doped substrates by Fourier-Transform Infrared Spectroscopy (FTIR) is implemented. The studied layers are grown by the chloride-hydride epitaxy method in a vertical reactor. The thickness control method is based on the analysis of interference patterns observed in infrared reflectance spectra. Recommendations are made on the choice of the measurement spectral range optimal for the InAs structures. The choice is determined by the minimal change of the InAs refraction index, and features of reflectance of the heavily-doped substrates. A good agreement between the measurement results on the developed method and the data of metallographic analysis is shown. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Determination of the indium arsenide autoepitaxial layers’ thickness by Fourier-Transform Infrared Spectroscopy

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Publisher
Pleiades Publishing
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739715080156
Publisher site
See Article on Publisher Site

Abstract

A method for the nondestructive contactless control of thickness of undoped autoepitaxial InAs layers on heavily-doped substrates by Fourier-Transform Infrared Spectroscopy (FTIR) is implemented. The studied layers are grown by the chloride-hydride epitaxy method in a vertical reactor. The thickness control method is based on the analysis of interference patterns observed in infrared reflectance spectra. Recommendations are made on the choice of the measurement spectral range optimal for the InAs structures. The choice is determined by the minimal change of the InAs refraction index, and features of reflectance of the heavily-doped substrates. A good agreement between the measurement results on the developed method and the data of metallographic analysis is shown.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 21, 2015

References

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