Determination of the diffusion length of charge minority carriers using digital oscillography of surface photovoltage

Determination of the diffusion length of charge minority carriers using digital oscillography of... A procedure for determining the diffusion length of charge minority carriers (CMCs), which uses digital oscillography to detect surface photovoltage (SPV), is considered. It is shown by experiments that the shape of pulses of SPV, excited by rectangular IR pulses, depends significantly on both their intensity and wavelength. It is shown that it is not valid to use a synchronous detector to measure the quasi-stationary SPV when determining the diffusion length of CMCs in semiconductors, because, in a number of cases, it results in an uncontrollable error that reaches 100% and more. A technique is developed for determining the diffusion length in silicon wafers and epitaxial structures with the specific resistance range 0.01–12 Ω cm, the diffusion length range 5–500 μm, and an error of not more than 8%. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Determination of the diffusion length of charge minority carriers using digital oscillography of surface photovoltage

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2010 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739710010051
Publisher site
See Article on Publisher Site

Abstract

A procedure for determining the diffusion length of charge minority carriers (CMCs), which uses digital oscillography to detect surface photovoltage (SPV), is considered. It is shown by experiments that the shape of pulses of SPV, excited by rectangular IR pulses, depends significantly on both their intensity and wavelength. It is shown that it is not valid to use a synchronous detector to measure the quasi-stationary SPV when determining the diffusion length of CMCs in semiconductors, because, in a number of cases, it results in an uncontrollable error that reaches 100% and more. A technique is developed for determining the diffusion length in silicon wafers and epitaxial structures with the specific resistance range 0.01–12 Ω cm, the diffusion length range 5–500 μm, and an error of not more than 8%.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jan 21, 2010

References

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