Designing gallium nitride-based monolithic microwave integrated circuits for the Ka, V, and W bands

Designing gallium nitride-based monolithic microwave integrated circuits for the Ka, V, and W bands A technology for fabricating multifunction monolithic microwave integrated circuits (MMICs) based on gallium nitride (GaN) heterostructures, which operate at the frequency range up to 100 GHz (the Ka, V, and W bands), is developed. Power amplifier (PA) MMICs operating at 90 GHz are fabricated using the coplanar technology with the gain coefficient being up to 15 dB and the specific output power exceeding 500 mW/mm. In addition, microstrip technology with the use of the polymer dielectric and grounding metallization over the wafer surface without through holes in the substrate is approved. The parameters of the MMICs for multifunction single-chip transmit-receive modules (TRMs), as well as the parameters of the MMICs for intermediate-frequency amplifiers (IFAs), voltage-controlled oscillators (VCOs), low noise amplifiers (LNAs), PAs, and balanced mixers operating in the Ka and V bands (up to 70 GHz), which are fabricated using the proposed technology, are presented. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Designing gallium nitride-based monolithic microwave integrated circuits for the Ka, V, and W bands

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Publisher
Springer Journals
Copyright
Copyright © 2016 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739716020049
Publisher site
See Article on Publisher Site

Abstract

A technology for fabricating multifunction monolithic microwave integrated circuits (MMICs) based on gallium nitride (GaN) heterostructures, which operate at the frequency range up to 100 GHz (the Ka, V, and W bands), is developed. Power amplifier (PA) MMICs operating at 90 GHz are fabricated using the coplanar technology with the gain coefficient being up to 15 dB and the specific output power exceeding 500 mW/mm. In addition, microstrip technology with the use of the polymer dielectric and grounding metallization over the wafer surface without through holes in the substrate is approved. The parameters of the MMICs for multifunction single-chip transmit-receive modules (TRMs), as well as the parameters of the MMICs for intermediate-frequency amplifiers (IFAs), voltage-controlled oscillators (VCOs), low noise amplifiers (LNAs), PAs, and balanced mixers operating in the Ka and V bands (up to 70 GHz), which are fabricated using the proposed technology, are presented.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 31, 2016

References

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