Design-processing features of microwave GaAs monolithic integrated circuits of a low-noise amplifier with a copper metallized frontside

Design-processing features of microwave GaAs monolithic integrated circuits of a low-noise... Design-processing solutions on the formation of microwave GaAs monolithic integrated circuits (MMICs) with copper-based metallization of the frontside are presented. As a metallization of ohmic and gate contacts of pHEMTs Pd/Ge/Al/Mo and Ti/Al/Mo multilayer compositions were respectively used. The first-level metallization was based on the W/Cu/WN x composition. The second-level metallization was formed by the electrochemical copper deposition, and the Ti/Cu film was used for the deposition as a seed layer. The Si x N y films were used for forming the interlevel dielectric and the dielectric of capacitors. To protect copper films from the influence of the environment, the frontside of the MMIC was covered by the benzocyclobutene (BCB) film with a 5-µm thickness. The metallization of the back side was fulfilled by the Ni/Au film with a total thickness of 3 µm. The developed design-processing solutions were tested by the example of the monolithic integrated circuit of the low-noise amplifier, based on pHEMT with 250 nm T-gates. The manufactured MMIC had a gain of 28 ± 1 dB in a frequency range of 8–10 GHz, and the noise figure did not exceed 2 dB. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Design-processing features of microwave GaAs monolithic integrated circuits of a low-noise amplifier with a copper metallized frontside

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Publisher
Springer Journals
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739715060049
Publisher site
See Article on Publisher Site

Abstract

Design-processing solutions on the formation of microwave GaAs monolithic integrated circuits (MMICs) with copper-based metallization of the frontside are presented. As a metallization of ohmic and gate contacts of pHEMTs Pd/Ge/Al/Mo and Ti/Al/Mo multilayer compositions were respectively used. The first-level metallization was based on the W/Cu/WN x composition. The second-level metallization was formed by the electrochemical copper deposition, and the Ti/Cu film was used for the deposition as a seed layer. The Si x N y films were used for forming the interlevel dielectric and the dielectric of capacitors. To protect copper films from the influence of the environment, the frontside of the MMIC was covered by the benzocyclobutene (BCB) film with a 5-µm thickness. The metallization of the back side was fulfilled by the Ni/Au film with a total thickness of 3 µm. The developed design-processing solutions were tested by the example of the monolithic integrated circuit of the low-noise amplifier, based on pHEMT with 250 nm T-gates. The manufactured MMIC had a gain of 28 ± 1 dB in a frequency range of 8–10 GHz, and the noise figure did not exceed 2 dB.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 4, 2015

References

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