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J. Cressler (2005)
Silicon Heterostructure Handbook : Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
A. Grebennikov (2007)
RF and Microwave Transistor Oscillator Design
D. Gruner, H. Gustat, G. Boeck (2008)
Fully Integrated 5.8 GHz SiGe Power Amplifier2008 38th European Microwave Conference
D. Kehrer (2000)
Integrated Lumped Transformers in Silicon-based Technologies up to 20 GHz
W. Simb, A. Scholtz, D. Kehrer (2000)
Design of Monolithic Integrated Lumped Transformers in Silicon-based Technologies up to 20 GHz
V.V. Elesin, G.N. Nazarova (2008)
Elektronika, mikro- i nanoelektronika. Sb. nauch. trudov
Techniques for the design of passive elements for monolithic silicon-germanium microwave ICs, tolerant to ionizing radiation have been developed with regard to specific features of the design of microwave passive elements on conducting silicon substrates. A set of the elements for operation at frequencies up to 24 GHz has been designed and fabricated, which includes transmission lines, inductances, and symmetrical transformers for application in a user library for the silicon-germanium BiCMOS technology with design rules of 0.25 μm.
Russian Microelectronics – Springer Journals
Published: Apr 6, 2010
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