Design of passive elements for monolithic silicon-germanium microwave ICs tolerant to ionizing radiation

Design of passive elements for monolithic silicon-germanium microwave ICs tolerant to ionizing... Techniques for the design of passive elements for monolithic silicon-germanium microwave ICs, tolerant to ionizing radiation have been developed with regard to specific features of the design of microwave passive elements on conducting silicon substrates. A set of the elements for operation at frequencies up to 24 GHz has been designed and fabricated, which includes transmission lines, inductances, and symmetrical transformers for application in a user library for the silicon-germanium BiCMOS technology with design rules of 0.25 μm. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Design of passive elements for monolithic silicon-germanium microwave ICs tolerant to ionizing radiation

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2010 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739710020083
Publisher site
See Article on Publisher Site

Abstract

Techniques for the design of passive elements for monolithic silicon-germanium microwave ICs, tolerant to ionizing radiation have been developed with regard to specific features of the design of microwave passive elements on conducting silicon substrates. A set of the elements for operation at frequencies up to 24 GHz has been designed and fabricated, which includes transmission lines, inductances, and symmetrical transformers for application in a user library for the silicon-germanium BiCMOS technology with design rules of 0.25 μm.

Journal

Russian MicroelectronicsSpringer Journals

Published: Apr 6, 2010

References

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