Design and simulation of a doping-less charge plasma based enhancement mode GaN MOSFET

Design and simulation of a doping-less charge plasma based enhancement mode GaN MOSFET In this work, we design and simulate a doping-less normally OFF/enhancement mode GaN based MOSFET. The novelty of the device is that it uses the charge plasma concept to induce n type charge plasma in an undoped GaN film, by employing metal electrodes, to realize source and drain regions of a GaN MOSFET. The proposed device is not a hetero-structure device, like the conventional GaN/AlGaN MOSFET and is hence more reliable and free from the hetero-epitaxial defects, inverse piezoelectric effects, and can have reduced leakage. Further, the proposed device can be fabricated at a reduced thermal budget as it does not possess any doped region. A two dimensional calibrated simulation study of the proposed device has revealed that it exhibits a threshold voltage of 1.4 V, large $$I_{\mathrm{ON}}/I_{\mathrm{OFF}}$$ I ON / I OFF ratio of $$10 ^{12}$$ 10 12 , cutoff frequency ( $$f_\mathrm{T}$$ f T ) of 0.58 GHz, maximum oscillation frequency ( $$f_{\mathrm{max}}$$ f max ) of 3.2 GHz, transconductance ( $$g_{\mathrm{m}}$$ g m ) of 40 mS/mm and a breakdown voltage of 22 V (at $$L_\mathrm{GD}= 0$$ L GD = 0 ). Further, the enhancement mode operation in the proposed device has been realized in a much easier way than that in the state of the art doping less AlGaN/GaN based devices. A process flow for the fabrication of the proposed device is also given. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Computational Electronics Springer Journals

Design and simulation of a doping-less charge plasma based enhancement mode GaN MOSFET

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Publisher
Springer US
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC
Subject
Engineering; Mathematical and Computational Engineering; Electrical Engineering; Theoretical, Mathematical and Computational Physics; Optical and Electronic Materials; Mechanical Engineering
ISSN
1569-8025
eISSN
1572-8137
D.O.I.
10.1007/s10825-017-1084-6
Publisher site
See Article on Publisher Site

Abstract

In this work, we design and simulate a doping-less normally OFF/enhancement mode GaN based MOSFET. The novelty of the device is that it uses the charge plasma concept to induce n type charge plasma in an undoped GaN film, by employing metal electrodes, to realize source and drain regions of a GaN MOSFET. The proposed device is not a hetero-structure device, like the conventional GaN/AlGaN MOSFET and is hence more reliable and free from the hetero-epitaxial defects, inverse piezoelectric effects, and can have reduced leakage. Further, the proposed device can be fabricated at a reduced thermal budget as it does not possess any doped region. A two dimensional calibrated simulation study of the proposed device has revealed that it exhibits a threshold voltage of 1.4 V, large $$I_{\mathrm{ON}}/I_{\mathrm{OFF}}$$ I ON / I OFF ratio of $$10 ^{12}$$ 10 12 , cutoff frequency ( $$f_\mathrm{T}$$ f T ) of 0.58 GHz, maximum oscillation frequency ( $$f_{\mathrm{max}}$$ f max ) of 3.2 GHz, transconductance ( $$g_{\mathrm{m}}$$ g m ) of 40 mS/mm and a breakdown voltage of 22 V (at $$L_\mathrm{GD}= 0$$ L GD = 0 ). Further, the enhancement mode operation in the proposed device has been realized in a much easier way than that in the state of the art doping less AlGaN/GaN based devices. A process flow for the fabrication of the proposed device is also given.

Journal

Journal of Computational ElectronicsSpringer Journals

Published: Oct 20, 2017

References

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