The present work explores the processing conditions of Bi0.9La0.1Fe0.9Mn0.1O3 (BLFM) thin films, grown by RF sputtering on platinum metalized silicon substrates, and its impact on the structural and ferroelectric properties. The optimized processing conditions were found to be a combination of deposition of an amorphous film at low substrate temperature (≤550 °C), followed by a thermal treatment at 550 °C during 30 min, in order to prevent bismuth volatilization. This procedure leads to the formation of high-quality monophasic crystalline films with well-defined piezoelectric response exhibiting micron size domains.
Journal of Materials Science: Materials in Electronics – Springer Journals
Published: May 16, 2017
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