Dependence of the thermal resistance of a powerful MOSFET on a silicon-on-insulator substrate on the construction-technological parameters of its structure

Dependence of the thermal resistance of a powerful MOSFET on a silicon-on-insulator substrate on... We considered the peculiarities of simulating a powerful MOSFET built on a silicon-on-insulator substrate. With the aid of instrumental-technological simulation programs, we studied dependences of the factors influencing the thermal resistance on the construction-technological parameters of a powerful device. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Dependence of the thermal resistance of a powerful MOSFET on a silicon-on-insulator substrate on the construction-technological parameters of its structure

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739712070049
Publisher site
See Article on Publisher Site

Abstract

We considered the peculiarities of simulating a powerful MOSFET built on a silicon-on-insulator substrate. With the aid of instrumental-technological simulation programs, we studied dependences of the factors influencing the thermal resistance on the construction-technological parameters of a powerful device.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 7, 2012

References

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