Density of states at a gamma-irradiated Si/SiO2 interface: The effect of ultrasonic treatment

Density of states at a gamma-irradiated Si/SiO2 interface: The effect of ultrasonic treatment An experimental study is conducted into the effect of ultrasonic treatment on the surface-state distribution function of a gamma-irradiated Si/SiO2 interface. It is established that ultrasonic treatment reduces the density of radiation-induced states at the interface. It is shown that this effect may be linked to the ultrasound-induced transition of defects to an electrically inactive state. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Density of states at a gamma-irradiated Si/SiO2 interface: The effect of ultrasonic treatment

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Publisher
Springer Journals
Copyright
Copyright © 2005 by MAIK "Nauka/Interperiodica"
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1007/s11180-006-0003-5
Publisher site
See Article on Publisher Site

Abstract

An experimental study is conducted into the effect of ultrasonic treatment on the surface-state distribution function of a gamma-irradiated Si/SiO2 interface. It is established that ultrasonic treatment reduces the density of radiation-induced states at the interface. It is shown that this effect may be linked to the ultrasound-induced transition of defects to an electrically inactive state.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 21, 2006

References

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