1063-7397/05/3406- © 2005 MAIK “Nauka /Interperiodica”
Russian Microelectronics, Vol. 34, No. 6, 2005, pp. 356–358. Translated from Mikroelektronika, Vol. 34, No. 6, 2005, pp. 420–423.
Original Russian Text Copyright © 2005 by Parchinskii.
Density of States at a Gamma-Irradiated Si/SiO
The Effect of Ultrasonic Treatment
P. B. Parchinskii
National University of Uzbekistan, Tashkent, Uzbekistan
Received February 10, 2005
—An experimental study is conducted into the effect of ultrasonic treatment on the surface-state dis-
tribution function of a gamma-irradiated Si/SiO
interface. It is established that ultrasonic treatment reduces the
density of radiation-induced states at the interface. It is shown that this effect may be linked to the ultrasound-
induced transition of defects to an electrically inactive state.
–32 –28 –24 –20 –16 –12 –8 –4 4 8
are obtained by measurement before irradiation, between irradiation and
ultrasonic treatment, and after ultrasonic treatment, respectively. Curve
is a calculated one.
The thermal oxidation of a silicon surface is cur-
rently a major process in the semiconductor industry.
The resulting Si/
interface has an important or even
a crucial inﬂuence on the parameters of the devices and
structures. The quality of the interface is mainly char-
acterized by the surface-state density
and the sur-
face-state distribution function
across the silicon