Delta-Doping of Monocrystalline Semiconductors by Al and Sb Implantation Using FIB Resistless Lithography

Delta-Doping of Monocrystalline Semiconductors by Al and Sb Implantation Using FIB Resistless... The potential is investigated of FIB lithography for implantation delta-doping in order to produce desired arrangements of quantum wires and dots. Both raster and vector scanning are considered. The results are briefly reported of molecular-dynamics and Monte Carlo (SRIM′2003) computations concerned with the scattering of low-energy Al and Sb ions from a monocrystalline-semiconductor surface. It is concluded that the ion energy should be taken within the range 100–300 eV if implantation depths of 1–5 nm are required. A formalism is derived for evaluating the ultimate resolution and the processing time of FIB implanters that use a Gaussian or a vector-scanned variable shaped beam. It is noted that the formalism can be modified to apply to IPL implanters. It is shown that an FIB implanter with an electrostatic objective can provide a lateral resolution better than 20 nm. It is also demonstrated that using a vector-scanned variable shaped beam enables one to create an experimental quantum register containing up to 106 qubits. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Delta-Doping of Monocrystalline Semiconductors by Al and Sb Implantation Using FIB Resistless Lithography

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Publisher
Springer Journals
Copyright
Copyright © 2004 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/B:RUMI.0000046966.45793.8f
Publisher site
See Article on Publisher Site

Abstract

The potential is investigated of FIB lithography for implantation delta-doping in order to produce desired arrangements of quantum wires and dots. Both raster and vector scanning are considered. The results are briefly reported of molecular-dynamics and Monte Carlo (SRIM′2003) computations concerned with the scattering of low-energy Al and Sb ions from a monocrystalline-semiconductor surface. It is concluded that the ion energy should be taken within the range 100–300 eV if implantation depths of 1–5 nm are required. A formalism is derived for evaluating the ultimate resolution and the processing time of FIB implanters that use a Gaussian or a vector-scanned variable shaped beam. It is noted that the formalism can be modified to apply to IPL implanters. It is shown that an FIB implanter with an electrostatic objective can provide a lateral resolution better than 20 nm. It is also demonstrated that using a vector-scanned variable shaped beam enables one to create an experimental quantum register containing up to 106 qubits.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 19, 2004

References

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