DeleCut: Producing High-Quality SOI Structures by Hydrogen Ion Implantation

DeleCut: Producing High-Quality SOI Structures by Hydrogen Ion Implantation DeleCut, a new technology for producing SOI structures, is presented [1]. It is an improvement on the SmartCut® process. DeleCut allows one to reduce annealing temperature and offers a lower concentration of radiation defects, a thinner transferred silicon layer, and a thinner transition layer between the silicon and the insulator (oxide). This process technology makes it possible to obtain silicon and insulator layers whose thicknesses are uniform within a few nanometers. A batch of SOI wafers of diameter 100–150 mm is fabricated with a pilot production line, the silicon films being free from dislocations. On the basis of the SOI structures, several types of submicrometer test CMOS circuits are successfully produced. Russian Microelectronics Springer Journals

DeleCut: Producing High-Quality SOI Structures by Hydrogen Ion Implantation

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Kluwer Academic Publishers-Plenum Publishers
Copyright © 2002 by MAIK "Nauka/Interperiodica"
Engineering; Electrical Engineering
Publisher site
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