DeleCut, a new technology for producing SOI structures, is presented . It is an improvement on the SmartCut® process. DeleCut allows one to reduce annealing temperature and offers a lower concentration of radiation defects, a thinner transferred silicon layer, and a thinner transition layer between the silicon and the insulator (oxide). This process technology makes it possible to obtain silicon and insulator layers whose thicknesses are uniform within a few nanometers. A batch of SOI wafers of diameter 100–150 mm is fabricated with a pilot production line, the silicon films being free from dislocations. On the basis of the SOI structures, several types of submicrometer test CMOS circuits are successfully produced.
Russian Microelectronics – Springer Journals
Published: Oct 13, 2004
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