Defect formation in epitaxial GaP junctions under heat treatment

Defect formation in epitaxial GaP junctions under heat treatment A theoretical and experimental investigation is reported into the influence of hydrogen heat treatment on the electrical and electroluminescent characteristics of GaP LEDs. It is shown that electrical transport in processed specimens is mainly by tunneling. The tunneling rate as a function of some properties is examined. A mechanism of electrical transport in the LEDs is proposed. The role of hopping conduction is discussed, and its parameters are determined. Electroluminescence spectra are measured and explained in terms of thermally induced structural changes in defects. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Defect formation in epitaxial GaP junctions under heat treatment

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Publisher
Springer Journals
Copyright
Copyright © 2005 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1007/s11180-005-0005-8
Publisher site
See Article on Publisher Site

Abstract

A theoretical and experimental investigation is reported into the influence of hydrogen heat treatment on the electrical and electroluminescent characteristics of GaP LEDs. It is shown that electrical transport in processed specimens is mainly by tunneling. The tunneling rate as a function of some properties is examined. A mechanism of electrical transport in the LEDs is proposed. The role of hopping conduction is discussed, and its parameters are determined. Electroluminescence spectra are measured and explained in terms of thermally induced structural changes in defects.

Journal

Russian MicroelectronicsSpringer Journals

Published: Feb 19, 2005

References

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