The parameters of deep traps in ZnCdTe(Cl) solid solutions were found with the method of thermally stimulated capacitor discharge (TCD). It was shown that the vapor-grown single crystals have a rather low concentration of deep traps, which influence nonequilibrium-carrier transfer. It seems that vapor-grown single-crystal quasi-binary ZnCdTe compounds are candidates for high-temperature ionizing-radiation detectors. From our results, it also follows that the TCD current method is helpful in investigating and selecting a detector-grade material.
Russian Microelectronics – Springer Journals
Published: Oct 10, 2004
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