Deep-Level Effects in GaAs Microelectronics: A Review

Deep-Level Effects in GaAs Microelectronics: A Review A considerable body of research literature on deep centers in GaAs is analyzed. It is shown that the issue remains most relevant to GaAs microelectronics. Data are discussed on the nature of deep centers in the bulk-grown and epitaxial forms of GaAs, whether ion-implanted or undoped. Methods for the characterization of deep centers are described. Theoretical models representing the influence of deep centers on the parameters of devices and ICs are considered. Particular coverage is given to backgating. Practical recommendations are reviewed for controlling the adverse effects of deep centers on the performance of GaAs devices and ICs. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Deep-Level Effects in GaAs Microelectronics: A Review

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2003 by MAIK Nauka/Interperiodica
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1025528416032
Publisher site
See Article on Publisher Site

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