CVD-growth of CNT with the use of catalutic Ct–Me–N–O thin films incorporated in the technology

CVD-growth of CNT with the use of catalutic Ct–Me–N–O thin films incorporated in the... The process of the formation of carbon nanotube arrays on Ct–Me–N catalytic alloys of low nickel content (10–20 at %) by chemical vapor deposition, where Ct is a catalytic metal from the group of Ni, Co, Fe, and Pd, and Me is a transition metal of group IV–VII of the periodic table, was investigated. It is shown that CNT grow effectively when the alloy contains Ti, V, Cr, Zr, Hf, Nb, and Ta. The addition of nitrogen and oxygen to the alloy’s composition gives rise to a buildup of oxynitrides, expelling of the catalyst, and formation of its clusters on the surface. The replacement of metals in the alloy has an effect on the diameter of the CNT. Moreover, the alloy films 10–500 nm thick can be used for the CNT growth, which is responsible for high degree of homogeneity and the repeatability of the process. CNT growth was not observed when the alloy contained W and Re. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

CVD-growth of CNT with the use of catalutic Ct–Me–N–O thin films incorporated in the technology

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Publisher
Pleiades Publishing
Copyright
Copyright © 2017 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739717020032
Publisher site
See Article on Publisher Site

Abstract

The process of the formation of carbon nanotube arrays on Ct–Me–N catalytic alloys of low nickel content (10–20 at %) by chemical vapor deposition, where Ct is a catalytic metal from the group of Ni, Co, Fe, and Pd, and Me is a transition metal of group IV–VII of the periodic table, was investigated. It is shown that CNT grow effectively when the alloy contains Ti, V, Cr, Zr, Hf, Nb, and Ta. The addition of nitrogen and oxygen to the alloy’s composition gives rise to a buildup of oxynitrides, expelling of the catalyst, and formation of its clusters on the surface. The replacement of metals in the alloy has an effect on the diameter of the CNT. Moreover, the alloy films 10–500 nm thick can be used for the CNT growth, which is responsible for high degree of homogeneity and the repeatability of the process. CNT growth was not observed when the alloy contained W and Re.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 23, 2017

References

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