Creation of lithographic masks using a scanning probe microscope

Creation of lithographic masks using a scanning probe microscope The experimental results on scanning probe lithography (SPL)—the formation of lithographic masks using scanning probe microscope—are presented. Polymethylmethacrylate (PMMA)-based masks prepared by the SPL method are used to form metal nanoparticles of the specified sizes and shape, as well as the metallic nanowires connecting the contact areas. The analysis of various SPL modes showed that the procedure of point indentation with the switched-on microscope feedback is optimal for the formation of round nanoparticles. When forming the rectangular particles, the procedure of multiple scanning of one region in the contact mode is optimal. The quality of lithographic masks can be substantially increased by the additional use of chemical etching to remove excess PMMA after the mask is formed. The topography and magnetization structure of the formed structures were monitored by atomic force microscopy and magnetic force microscopy. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Creation of lithographic masks using a scanning probe microscope

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Publisher
Springer Journals
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739715050042
Publisher site
See Article on Publisher Site

Abstract

The experimental results on scanning probe lithography (SPL)—the formation of lithographic masks using scanning probe microscope—are presented. Polymethylmethacrylate (PMMA)-based masks prepared by the SPL method are used to form metal nanoparticles of the specified sizes and shape, as well as the metallic nanowires connecting the contact areas. The analysis of various SPL modes showed that the procedure of point indentation with the switched-on microscope feedback is optimal for the formation of round nanoparticles. When forming the rectangular particles, the procedure of multiple scanning of one region in the contact mode is optimal. The quality of lithographic masks can be substantially increased by the additional use of chemical etching to remove excess PMMA after the mask is formed. The topography and magnetization structure of the formed structures were monitored by atomic force microscopy and magnetic force microscopy.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 4, 2015

References

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