The problem of taking into account the thermal processes in high-performance microcircuits based on heterostructural bipolar transistors (HBT) is considered. A new thermal model of the HBT is suggested, which differs from the known BJT504t model by the addition of thermal resistance and thermal capacity. The means to decrease the thermal resistance of the HBT and to correct the electrothermal coupling in the comparator are suggested. Simulation of the comparator using the simplified model of the transistor in a wide temperature range showed that the use of compensation makes it possible to attain a decrease in the magnitude of hysteresis by a factor of 10.
Russian Microelectronics – Springer Journals
Published: Nov 7, 2012
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