Conversion model of enhanced low-dose-rate sensitivity for bipolar ICs

Conversion model of enhanced low-dose-rate sensitivity for bipolar ICs A physical model is proposed for enhanced low-dose-rate sensitivity (ELDRS) in bipolar junction transistors. It is based on the conception of a shallow and a deep set of radiation-induced oxide traps that are converted into interface traps under irradiation at high or low dose rates, respectively. Excess base current is calculated by introducing an exponential or a power-law representation of the impulse response used in a convolution integral. The former representation makes it possible to define time constants of conversion at high or low dose rates, respectively. Values of fitting model parameters are determined that lead to close agreement with previously reported experimental results. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Conversion model of enhanced low-dose-rate sensitivity for bipolar ICs

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2010 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739710020046
Publisher site
See Article on Publisher Site

Abstract

A physical model is proposed for enhanced low-dose-rate sensitivity (ELDRS) in bipolar junction transistors. It is based on the conception of a shallow and a deep set of radiation-induced oxide traps that are converted into interface traps under irradiation at high or low dose rates, respectively. Excess base current is calculated by introducing an exponential or a power-law representation of the impulse response used in a convolution integral. The former representation makes it possible to define time constants of conversion at high or low dose rates, respectively. Values of fitting model parameters are determined that lead to close agreement with previously reported experimental results.

Journal

Russian MicroelectronicsSpringer Journals

Published: Apr 6, 2010

References

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