A technique is developed of the deposition and electrode-bonding of single-wall carbon nanotubes. The causes are investigated of breakdown observed at the nanotube–electrode interface. A method is proposed for the conduction alteration of as-prepared bundles, using electrical breakdown. A mock-up of p-channel FET is produced from a nanotube bundle. Its static performance is measured.
Russian Microelectronics – Springer Journals
Published: Oct 19, 2004
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