Contact TiSi2and Barrier TiN Layers for ULSI Multilevel Metallization

Contact TiSi2and Barrier TiN Layers for ULSI Multilevel Metallization TiSi2and TiN thin films are deposited with the surface-diffusion reactions of titanium with silicon and nitrogen, respectively. It is demonstrated that the deposition of a TiSi1.3alloy onto an Si substrate heated to 675°C produces a low-resistivity TiSi2film. At the same time, a silicide film forms on SiO2. This film can be distinguished from the disilicide on Si for the purpose of total selective etching. Special process conditions are determined for the fabrication of homogeneous polycrystalline TiN films with a columnar structure and low resistivity (25–35 μΩ cm) http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Contact TiSi2and Barrier TiN Layers for ULSI Multilevel Metallization

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Publisher
Springer Journals
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1013848805088
Publisher site
See Article on Publisher Site

Abstract

TiSi2and TiN thin films are deposited with the surface-diffusion reactions of titanium with silicon and nitrogen, respectively. It is demonstrated that the deposition of a TiSi1.3alloy onto an Si substrate heated to 675°C produces a low-resistivity TiSi2film. At the same time, a silicide film forms on SiO2. This film can be distinguished from the disilicide on Si for the purpose of total selective etching. Special process conditions are determined for the fabrication of homogeneous polycrystalline TiN films with a columnar structure and low resistivity (25–35 μΩ cm)

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 13, 2004

References

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