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Conditions for the formation of defectless quantum dots in the theoretical estimation of In x Ga1 − x As/GaAs heterostructures

Conditions for the formation of defectless quantum dots in the theoretical estimation of In x Ga1... Critical thiknesses of formation mismatch dislocations and transition from two dimensional to three dimensional (2D–3D) mode during growth of In x Ga1 − x As/GaAs heterostructures by the Stranski-Krastanow mechanism were estimated using the energy balance model. The maximal magnitudes of those values and the intervals of the composition of solid solutions allowing the growth of defectless quantum dots were obtained. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Conditions for the formation of defectless quantum dots in the theoretical estimation of In x Ga1 − x As/GaAs heterostructures

Russian Microelectronics , Volume 40 (8) – Dec 9, 2011

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References (16)

Publisher
Springer Journals
Copyright
Copyright © 2011 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
DOI
10.1134/S1063739711080026
Publisher site
See Article on Publisher Site

Abstract

Critical thiknesses of formation mismatch dislocations and transition from two dimensional to three dimensional (2D–3D) mode during growth of In x Ga1 − x As/GaAs heterostructures by the Stranski-Krastanow mechanism were estimated using the energy balance model. The maximal magnitudes of those values and the intervals of the composition of solid solutions allowing the growth of defectless quantum dots were obtained.

Journal

Russian MicroelectronicsSpringer Journals

Published: Dec 9, 2011

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