Computer simulation of the heat distribution element for high-power microwave transistors

Computer simulation of the heat distribution element for high-power microwave transistors A simulation procedure is proposed that allows one to find temperature distributions in electronic devices and to evaluate thermal resistances for the whole device and for its individual structural elements. The results of calculating the temperature distribution in a multifinger high-power microwave transistor (HP-MWT) are presented. In the case of the model under study, it is found that placing a heat distribution element (HDE) made of polycrystalline CVD diamond between the crystal and the heat sink reduces the total thermal resistance of the transistor structure and decreases the overheat of the structure by approximately 2%. For the model of the multifinger HP-MWT, the dependences of the thermal resistance on the thickness and width of the HDE are obtained. The HDE size optimal in terms of the minimum thermal resistance of the structure is found to be 6000 × 6000 × 800 μm. For the model of the multifinger HP-MWT with the HDE, the maximum temperatures in the area of heat release are compared for various values of convection. Natural air convection is found to be sufficient for heat remove. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Computer simulation of the heat distribution element for high-power microwave transistors

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Publisher
Pleiades Publishing
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739715040058
Publisher site
See Article on Publisher Site

Abstract

A simulation procedure is proposed that allows one to find temperature distributions in electronic devices and to evaluate thermal resistances for the whole device and for its individual structural elements. The results of calculating the temperature distribution in a multifinger high-power microwave transistor (HP-MWT) are presented. In the case of the model under study, it is found that placing a heat distribution element (HDE) made of polycrystalline CVD diamond between the crystal and the heat sink reduces the total thermal resistance of the transistor structure and decreases the overheat of the structure by approximately 2%. For the model of the multifinger HP-MWT, the dependences of the thermal resistance on the thickness and width of the HDE are obtained. The HDE size optimal in terms of the minimum thermal resistance of the structure is found to be 6000 × 6000 × 800 μm. For the model of the multifinger HP-MWT with the HDE, the maximum temperatures in the area of heat release are compared for various values of convection. Natural air convection is found to be sufficient for heat remove.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jul 6, 2015

References

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