Computer Simulation of a Nanoscale Ballistic SOI MOSFET with a Sub-10-nm Si Layer

Computer Simulation of a Nanoscale Ballistic SOI MOSFET with a Sub-10-nm Si Layer A physical model and a computer simulation program for nanoscale ballistic SOI MOSFETs are developed. The model includes transistor parameters such as the type and level of doping in the source and drain regions, gate length, Si and gate-oxide thicknesses, spacer length, gate-material work function, etc. Transistor performance is characterized in terms of transconductance, subthreshold slope, on- and off-state drain currents, gate–source overlap capacitance, etc. The software enables one to optimize the transistor parameters. Russian Microelectronics Springer Journals

Computer Simulation of a Nanoscale Ballistic SOI MOSFET with a Sub-10-nm Si Layer

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Kluwer Academic Publishers-Plenum Publishers
Copyright © 2003 by MAIK Nauka/Interperiodica
Engineering; Electrical Engineering
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