Complex investigations of effects of charging a polymer resist (PMMA) during electron lithography

Complex investigations of effects of charging a polymer resist (PMMA) during electron lithography Results of the measurement of the surface charging potential for PMMA films of various thicknesses under the effect of irradiation by electron beams of various energies are presented. The corresponding energy ranges of primary electrons are given for the cases of both positive and negative charging of the dielectrics. It is shown that two individual critical electron energies exist for each thickness of the PMMA resist, at which the resist is not charged. These energies can be recommended for low-voltage and high-voltage electron nanolithography with minimal errors in beam positioning. The experiments showed a very high value of the critical breakdown voltage of the PMMA film of about 107 V/cm. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Complex investigations of effects of charging a polymer resist (PMMA) during electron lithography

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2013 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739713020091
Publisher site
See Article on Publisher Site

Abstract

Results of the measurement of the surface charging potential for PMMA films of various thicknesses under the effect of irradiation by electron beams of various energies are presented. The corresponding energy ranges of primary electrons are given for the cases of both positive and negative charging of the dielectrics. It is shown that two individual critical electron energies exist for each thickness of the PMMA resist, at which the resist is not charged. These energies can be recommended for low-voltage and high-voltage electron nanolithography with minimal errors in beam positioning. The experiments showed a very high value of the critical breakdown voltage of the PMMA film of about 107 V/cm.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 13, 2013

References

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